| PART |
Description |
Maker |
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| SBTC-2-20_20L SBTC-2-20 SBTC-2-20L SBTC-2-2020L |
Power Splitter/Combiners 2 Way-050з 200 to 2000 MHz 200 MHz - 2000 MHz RF/MICROWAVE COMBINER, 2.2 dB INSERTION LOSS
Power Splitter/Combiners 2 Way-0° 50 200 to 2000 MHz
Power Splitter/Combiners 2 Way-0∑ 50з 200 to 2000 MHz
Power Splitter/Combiners 2 Way-0 50 200 to 2000 MHz
|
MINI[Mini-Circuits]
|
| AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-0 |
4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MITEQ, Inc.
MITEQ INC
|
| MAAMSS0045 MAAMSS0045TR-3000 MAAMSS0045SMB |
1400 MHz - 2000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
HIGH DYNAMIC RANGE LOW NOISE AMPLIFIER 1400 - 2000 MHZ
|
MACOM[Tyco Electronics]
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3 |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| AGR09180EF |
180 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| NHP-100 |
High Pass Filter 50Ω 90 to 2000 MHz
High Pass Filter 50惟 90 to 2000 MHz
High Pass Filter 50楼? 90 to 2000 MHz
|
Mini-Circuits
|
| PS8-08-454/3S PS8-10-454/3N PS8-01-454/1S PS8-05-4 |
2000 MHz - 8000 MHz RF/MICROWAVE SPLITTER, 1.4 dB INSERTION LOSS
7200 MHz - 8500 MHz RF/MICROWAVE SPLITTER, 1.5 dB INSERTION LOSS
500 MHz - 1000 MHz RF/MICROWAVE SPLITTER, 0.8 dB INSERTION LOSS
2000 MHz - 4000 MHz RF/MICROWAVE SPLITTER, 0.8 dB INSERTION LOSS
|
Samtec, Inc.
Mini-Circuits
|
| YL-23 YL-33 |
1000 MHz - 2000 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.3 dB INSERTION LOSS
2000 MHz - 4000 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.3 dB INSERTION LOSS
|
Marl International, Ltd.
|
